Other articles related with "parasitic bipolar junction transistor":
98505 Wei-Wei Yan(闫薇薇), Lin-Chun Gao(高林春), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Jia-Jun Luo(罗家俊), Zheng-Sheng Han(韩郑生)
  Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
    Chin. Phys. B   2017 Vol.26 (9): 98505-098505 [Abstract] (574) [HTML 0 KB] [PDF 2992 KB] (250)
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